Dielectric device

ABSTRACT

A dielectric device comprises a dielectric layer and first to nth metal layers (where n is an integer of 2 or greater) in contact with the dielectric layer. At least one of the first to nth metal layers contains a base metal. Interfaces between the first to nth metal layers and the dielectric layer have respective arithmetic mean roughnesses of Ra 1  to Ra n  (nm), while an average value Ram (nm) of the arithmetic mean roughnesses of Ra 1  to Ra n  (nm) and a thickness T (nm) of the dielectric layer satisfy T/Ram≧1.3.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a dielectric device.

2. Related Background Art

Dielectric devices having a structure in which an electrode is provided on a dielectric layer have been known. A typical example of the dielectric devices is a capacitor. Japanese Patent Application Laid-Open No. HEI 2004-319561 discloses a method of manufacturing a capacitor by using a metal foil having a surface formed with a dielectric layer. Japanese Patent Application Laid-Open No. HEI 5-251258 discloses a thin-film capacitor in which a lower electrode, a dielectric layer, and an upper electrode are successively laminated on a substrate.

SUMMARY OF THE INVENTION

Recently, along with demands for smaller sizes and higher quality in dielectric devices, it has been desired to thin the dielectric layer. When the dielectric layer is made too thin, however, the leakage current between the electrodes increases greatly.

It is therefore an object of the present invention to provide a dielectric device which can sufficiently suppress the leakage current even when the dielectric layer is thin.

The dielectric device in accordance with the present invention comprises a dielectric layer and first to nth metal layers (where n is an integer of 2 or greater) in contact with the dielectric layer. Interfaces between the first to nth metal layers and the dielectric layer have respective arithmetic mean roughnesses of Ra₁ to Ra_(n) (nm). An average value Ram (nm) of these arithmetic mean roughnesses of Ra₁ to Ra_(n) (nm) and a thickness T (nm) of the dielectric layer satisfy T/Ram≧1.3.

Even when the dielectric layer is thin, the leakage current in the dielectric device can sufficiently be suppressed if the roughness in the interface between each metal layer and the dielectric layer is set appropriately such that T/Ram≧1.3 is satisfied.

More preferably, T/Ram≧3.6. This reduces the leakage current of the dielectric device more than in the case where T/Ram is less than 3.6.

Further preferably, T/Ram≧12. This reduces the leakage current of the dielectric device more than in the case where T/Ram is less than 12.

Further preferably, T/Ram≧28. This reduces the leakage current of the dielectric device more than in the case where T/Ram is less than 28.

At least one of the first to nth metal layers may contain a base metal. Examples of the base metal include Ni, Cu, and Al. For precision polishing of a metal surface, a technique using chemical etching together with mechanical polishing (e.g., chemical mechanical polishing) is often used. When a metal layer is or contains a base metal, the chemical etching progresses faster, whereby the above-mentioned surface roughness can be obtained easily. Preferably, in the metal layer containing a base metal, the base metal content is 40 mass % or greater. One of the first to nth metal layers may be a metal foil supporting the dielectric layer. The dielectric layer may be constituted by an oxide containing at least one element of Ba, Sr, Ca, Pb, Ti, Zr, and Hf. The dielectric layer may be constituted by an oxide having a perovskite structure.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic sectional view showing the structure of the dielectric device in accordance with an embodiment;

FIG. 2 is a process chart showing a method of manufacturing the dielectric device;

FIG. 3 is a schematic view showing a cross-sectional image of the dielectric device;

FIG. 4 is a chart showing an example of roughness curve;

FIG. 5 is a graph showing experimental results; and

FIG. 6 is a graph showing experimental results.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

In the following, embodiments of the present invention will be explained in detail with reference to the accompanying drawings. In the explanation of the drawings, the same constituents will be referred to with the same numerals while omitting their overlapping descriptions.

First, the basic principle of the present invention will be explained. Concerning a dielectric device in which multiple metal layers are in contact with a dielectric layer, the inventors take account of not only the thickness of the dielectric layer but also the roughness between the dielectric layer and each metal layer as a parameter which affects the leakage current.

As the dielectric layer is thinner, a greater leakage current tends to flow therethrough when a voltage is applied between metal layers. This tendency occurs not only when a pair of metal layers is formed so as to hold the dielectric layer therebetween, but also when multiple metal layers are formed on one main face of the dielectric layer.

On the other hand, according to studies by the inventors, the leakage current flowing between metal layers tends to decrease as the roughness between the dielectric layer and each metal layer is smaller. In the dielectric device, there are interfaces of the same number as that of metal layers, and their respective roughnesses affect the leakage current. Therefore, the inventors comprehensively evaluate the respective roughnesses of the interfaces between the dielectric layer and multiple metal layers by using their average value.

Letting Ra₁ to Ra_(n) (nm) be the respective roughnesses of the first to nth metal layers (where n is an integer of 2 or greater), their average value Ram (nm) is represented by (Ra₁+Ra₂+ . . . +Ra_(n))/n. As the average value of roughness Ram is smaller, the leakage current between the metal layers decreases. Therefore, even when the dielectric layer is thin, the leakage current can sufficiently be suppressed if the average value of roughness is small.

Thus, the leakage current is suppressed more as the thickness of the dielectric layer is greater and as the average value of interface roughness is smaller. This means that the leakage current is suppressed more as the ratio T/Ram of the thickness T (nm) of the dielectric layer to the average value Ram of interface roughness is greater. Therefore, even when the dielectric layer is thin (T is small), a dielectric device having sufficiently suppressed leakage current can be obtained if Ram is appropriately set such that T/Ram is large enough.

With reference to specific examples, values of T/Ram appropriate for suppressing the leakage current will be explained below. FIG. 1 is a schematic sectional view showing the structure of the dielectric device 10 in accordance with an embodiment. The dielectric device 10 has a metal foil 12 acting as a lower metal layer, a dielectric layer 14 provided on the upper face of the metal foil 12, and an upper metal layer 16 provided on the upper face of the dielectric layer 14. Namely, the metal foil 12 is in contact with one main face (lower face) of the dielectric layer 14, while the upper metal layer 16 is in contact with the other main face (upper face) of the dielectric layer 14. In FIG. 1, 18 refers to the interface between the metal foil 12 and dielectric layer 14, while 20 refers to the interface between the dielectric layer 14 and upper metal layer 16. This dielectric device 10 is a thin-film capacitor using the metal foil 12 and upper metal layer 16 as a pair of counter electrodes.

The metal foil 12 is self-sustainable, and thus functions as a base for supporting the dielectric layer 14 and upper metal layer 16. Preferred materials for the metal foil 12 and upper metal layer 16 are base metals which are inexpensive and low in resistance, such as Cu, Ni, and Al, for example.

A method of manufacturing the dielectric device 10 will be explained below. FIG. 2 is a process chart showing this manufacturing method. First, the metal foil 12 is prepared (FIG. 2(a)), and one main face (upper face) thereof is polished to obtain a mirror surface (FIG. 2(b)). Examples of the polishing method include not only chemical mechanical polishing (CMP), but also buffing, lapping, brushing, and electrochemical polishing.

Next, the dielectric layer 14 is formed on the polished upper face of the metal foil 12 (FIG. 2(c)). Examples of the method for forming the dielectric layer 14 include chemical solution deposition and sputtering. Specifically, a dielectric material is attached to the upper face of the metal foil 12 and fired, so as to form the dielectric layer 14.

Subsequently, the upper metal layer 16 is formed on the upper face of the dielectric layer 14 by sputtering or the like (FIG. 2(d)). Thus, the dielectric device 10 is obtained.

As mentioned above, even when the dielectric layer 14 is thin, the leakage current can sufficiently be suppressed if the roughness is small at the interface 18 between the lower metal layer 12 and dielectric layer 14 and the interface 20 between the dielectric layer 14 and upper metal layer 16. The roughness of these interfaces can comprehensively be evaluated by using the average value Ram [=(Ra₁+Ra₂)/2] of the arithmetic mean roughness Ra₁ of the interface 18 and the arithmetic mean roughness Ra₂ of the interface 20. The leakage current between the metal foil 12 and upper metal layer 16 can be suppressed more as the ratio (T/Ram) of the thickness T (nm) of the dielectric layer 14 to the average value Ram of interface roughness is greater.

The arithmetic mean roughness is defined in JIS B 0601, according to which the arithmetic mean roughnesses of the interfaces 18, 20 are determined. A method of determining the arithmetic mean roughnesses of the interfaces will now be explained.

First, for determining the arithmetic mean roughnesses of the interfaces 18, 20, a cross section of the dielectric device 10 is exposed. This can be done by a method of mechanically polishing the dielectric device 10 embedded in a resin, focused ion beam method, or the like.

Next, a part including cross-sectional curves of the interfaces 18 and 20 in the exposed cross section is observed with a scanning electron microscope or the like, so as to acquire an image of this part. FIG. 3 is a schematic view showing thus acquired cross-sectional image. In FIG. 3, 18 a and 20 a refer to the cross-sectional curves of the interfaces 18 and 20, respectively. The length in the horizontal direction (X direction of FIG. 3) of this cross-sectional image is set to a reference length defined in 7.2.1. of JIS B 0633 or greater. When different reference lengths are determined at the interfaces 18 and 20, the horizontal length of the cross-sectional image is set to the longer reference lengths or greater.

Next, information of undulations (ups and downs) in the cross-sectional curves 18 a and 20 a of the interfaces is acquired from the cross-sectional image. Specifically, as defined in 3.1.6 of JIS B 0601, a high-pass filter is used so as to cut off longer wavelength components from the cross-sectional curves 18 a and 20 a, and obtain roughness curves. FIG. 4 is a chart showing an example of roughness curve. In FIG. 4, 22 refers to a roughness curve, whereas 24 indicates an average line of the roughness curve 22.

Thereafter, an arithmetic operation represented by the following expression is performed according to each of the respective roughness curves corresponding to the interfaces 18 and 20, whereby the arithmetic mean roughnesses of the interfaces are determined. $\begin{matrix} {{Ra} = {\frac{1}{lr}{\int_{0}^{lr}{{{Z(x)}}\quad{\mathbb{d}x}}}}} & (1) \end{matrix}$

This expression is defined in 4.2.1 of JIS B 0601. Here, Ra is the arithmetic mean roughness, and Ir is the reference length. Z(x) is the vertical coordinate value defined in 3.2.8 of JIS B 0601 and represents the height of the roughness curve at a given horizontal position x. The sign of Z(x) is negative and positive on the lower and upper sides of the average line, respectively.

The inventors made a number of dielectric devices 10 under various conditions according to the above-mentioned manufacturing method, determined the ratio T/Ram of the thickness T of the dielectric layer 14 to the average value Ram of interface roughness in each of thus obtained devices, and investigated numerical ranges of T/Ram appropriate for suppressing the leakage current.

The following Table 1 shows the manufacturing conditions. TABLE 1 STEP PARAMETER 1-1 1-2 1-3 2-1 2-2 2-3 3-1 3-2 3-3 POLISH- WORK PURE Ni SAME SAME SAME SAME SAME SAME SAME SAME ING MATERIAL/ 50 × 50(mm) AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT SIZE APPARATUS NO NO NO SINGLE-SIDE SAME SAME SAME SAME SAME POLISHING POLISHING POLISHING POLISHER AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT ABRASIVE ALUMINA SAME SAME SAME SAME SAME ABRASIVE AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT GRAIN Φ1 μm, ACIDIC SOLVENT (pH = 3) PLATE RESIN SAME SAME SAME SAME SAME MATERIAL PAD AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT ROTATING  60 rpm SAME SAME SAME SAME SAME SPEED AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT PROCESSING  1 min SAME SAME  6 min SAME SAME TIME AS LEFT AS LEFT AS LEFT AS LEFT LOAD 250 g/cm² SAME SAME SAME SAME SAME AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT DIELEC- DIELECTRIC BST SAME SAME SAME SAME SAME SAME SAME SAME TRIC MATERIAL AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT FORMA- COATING SPIN SAME SAME SAME SAME SAME SAME SAME SAME TION METHOD COAT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT DIELECTRIC 100 nm 200 nm 700 nm 100 nm 200 nm 700 nm 100 nm 200 nm 700 nm THICKNESS FIRING 800° C. SAME SAME SAME SAME SAME SAME SAME SAME TEMP. AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT UPPER ELECTRODE Cu SAME SAME SAME SAME SAME SAME SAME SAME ELEC- MATERIAL AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT TRODE ELECTRODE 200(nm)/ SAME SAME SAME SAME SAME SAME SAME SAME FORMA- THICKNESS/ 4.0 × 4.0 AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT TION FORM (mm) STEP PARAMETER 4-1 4-2 4-3 5-1 5-2 5-3 6-1 6-2 6-3 POLISH- WORK MATERIAL/ SAME SAME SAME SAME SAME SAME SAME SAME SAME ING SIZE AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT APPARATUS SAME SAME SAME SAME SAME SAME SAME SAME SAME AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT ABRASIVE SAME SAME SAME SAME SAME SAME SAME SAME SAME AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT PLATE SAME SAME SAME SAME SAME SAME SAME SAME SAME MATERIAL AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT ROTATING SAME SAME SAME SAME SAME SAME SAME SAME SAME SPEED AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT PROCESSING  9 min SAME SAME  95 min SAME SAME 140 min SAME SAME TIME AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT LOAD SAME SAME SAME SAME SAME SAME SAME SAME SAME AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT DIELEC- DIELECTRIC SAME SAME SAME SAME SAME SAME SAME SAME SAME TRIC MATERIAL AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT FORMA- COATING SAME SAME SAME SAME SAME SAME SAME SAME SAME TION METHOD AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT DIELECTRIC 100 nm 200 nm 700 nm 100 nm 200 nm 700 nm 100 nm 200 nm 700 nm THICKNESS FIRING SAME SAME SAME SAME SAME SAME SAME SAME SAME TEMP. AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT UPPER ELECTRODE SAME SAME SAME SAME SAME SAME SAME SAME SAME ELEC- MATERIAL AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT TRODE ELECTRODE SAME SAME SAME SAME SAME SAME SAME SAME SAME FORMA- THICKNESS/ AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT AS LEFT TION FORM

In this table, the items of “Polishing” indicate polishing conditions of the metal foil 12. The metal foil 12 was constituted by pure Ni, whose upper side was polished by chemical mechanical polishing (CMP) using a single-side polishing machine. However, no CMP was performed in manufacturing conditions 1-1, 1-2, and 1-3. In the other manufacturing conditions, CMP was performed by the times listed in Table 1. Namely, the CMP time was 1 minute in manufacturing conditions 2-1, 2-2, and 2-3; 6 minutes in manufacturing conditions 3-1, 3-2, and 3-3; 9 minutes in manufacturing conditions 4-1, 4-2, and 4-3; 95 minutes in manufacturing conditions 5-1, 5-2, and 5-3; and 140 minutes in manufacturing conditions 6-1, 6-2, and 6-3.

Next, the dielectric layer 14 was formed on thus polished upper face. Its forming conditions are shown in the items of “Dielectric formation” in Table 1. Employed as the material for the dielectric layer 14 was BST, i.e., barium strontium titanate (BaSr)TiO₃. Chemical solution deposition was used as the method of forming the dielectric layer 14. A solution (sol) of BST was applied by spin coating onto the polished upper face of the metal foil 12 followed by firing, so as to form the dielectric layer 14. The manufacturing conditions were further classified into three species according to the thickness of the dielectric layer 14. Namely, the thickness of the dielectric layer 14 was 100 nm in the manufacturing conditions 1-1, 2-1, 3-1, 4-1, 5-1, and 6-1; 200 nm in the manufacturing conditions 1-2, 2-2, 3-2, 4-2, 5-2, and 6-2; and 700 nm in the manufacturing conditions 1-3, 2-3, 3-3, 4-3, 5-3, and 6-3.

After forming the dielectric layer 14, the upper metal layer 16 was formed by sputtering on the upper face of the dielectric layer 14. The material and size of the upper metal layer 16 are shown in the items of “Dielectric formation” in Table 1. Namely, in all the manufacturing conditions, a Cu layer as the upper metal layer 16 was formed in a size of 4.0 mm×4.0 mm with a thickness of 200 nm.

The inventors made 50 dielectric devices 10 simultaneously under each manufacturing condition, and carried out this operation twice for each manufacturing condition. Determined for each of thus obtained dielectric devices 10 were (1) the arithmetic mean roughness Ra₁ of the interface 18 between the metal foil 12 and dielectric layer 14, (2) the arithmetic mean roughness Ra₂ of the interface 20 between the dielectric layer 14 and upper metal layer 16, (3) the average value Ram of Ra₁ and Ra₂, (4) the ratio T/Ram of the thickness T of the dielectric layer 14 to Ram, and (5) the leakage current density between the metal foil 12 and upper metal layer 16. The method of determining Ra₁ and Ra₂ is as mentioned above with reference to FIGS. 3 and 4. The leakage current density was determined by measuring the leakage current between the metal foil 12 and upper metal layer 16 while applying a DC voltage of 1 V therebetween at room temperature, and dividing this leakage current by the area of the upper metal layer 16.

The following Table 2 shows the results of this experiment. TABLE 2 RATIO (%) AVERAGE OF LEAKAGE LEAKAGE CURRENT CURRENT Ra₁ Ra₂ Ram T(nm)/ DENSITY ≦10⁻⁶ DENSITY MANUFACTURING T(nm) (nm) (nm) (nm) Ram(nm) A/cm² (A/cm²) CONDITION EXPERIMENTAL EXAMPLE 1 100 123 210 166.5 0.60 0 1.30 × 10⁻³ 1-1 EXPERIMENTAL EXAMPLE 2 100 115 200 157.5 0.63 0 1.10 × 10⁻³ 2-1 EXPERIMENTAL EXAMPLE 3 100 52 98 75.0 1.33 6 3.10 × 10⁻⁴ 3-1 EXPERIMENTAL EXAMPLE 4 100 33 73 53.0 1.89 20 1.00 × 10⁻⁵ 4-1 EXPERIMENTAL EXAMPLE 5 100 4 9 6.5 15.4 98 5.10 × 10⁻⁷ 5-1 EXPERIMENTAL EXAMPLE 6 100 2 4 3.0 33.3 100 1.00 × 10⁻⁷ 6-1 EXPERIMENTAL EXAMPLE 7 200 120 210 165 1.21 0 2.00 × 10⁻² 1-2 EXPERIMENTAL EXAMPLE 8 200 115 196 156 1.29 0 1.00 × 10⁻² 2-2 EXPERIMENTAL EXAMPLE 9 200 50 120 85 2.35 12 5.30 × 10⁻³ 3-2 EXPERIMENTAL EXAMPLE 10 200 33 54 44 4.60 44 4.70 × 10⁻⁵ 4-2 EXPERIMENTAL EXAMPLE 11 200 4 10 7 28.6 100 3.80 × 10⁻⁷ 5-2 EXPERIMENTAL EXAMPLE 12 200 2 4 3 66.7 100 8.40 × 10⁻⁸ 6-2 EXPERIMENTAL EXAMPLE 13 700 128 298 213 3.29 16 3.90 × 10⁻⁵ 1-3 EXPERIMENTAL EXAMPLE 14 700 115 269 192 3.65 42 5.30 × 10⁻⁶ 2-3 EXPERIMENTAL EXAMPLE 15 700 49 67 58 12.1 82 3.50 × 10⁻⁸ 3-3 EXPERIMENTAL EXAMPLE 16 700 29 49 39 17.9 96 3.30 × 10⁻⁸ 4-3 EXPERIMENTAL EXAMPLE 17 700 4 10 7 100 100 1.80 × 10⁻⁸ 5-3 EXPERIMENTAL EXAMPLE 18 700 2 6 4 175 100 1.50 × 10⁻⁸ 6-3

This table refers the groups having simultaneously manufactured 50 dielectric devices each under the respective manufacturing conditions to experimental examples 1, 2, and so forth. In each experimental example listed in Table 2, Ra₁ , Ra₂, Ram, and T/Ram are average values of Ra₁ , Ra₂, Ram and T/Ram measured in 50 dielectric devices included therein. Table 2 also lists the average leakage current density of 50 dielectric devices in each experimental example, and the ratio of devices having a low leakage current density of 10⁻⁶ A/cm² or less in the 50 dielectric devices.

FIG. 5 is a graph showing experimental results extracted from those listed in Table 2. The horizontal axis indicates the ratio T/Ram of the thickness T of the dielectric layer 14 to the average value Ram of interface roughness, while the vertical axis represents the ratio of dielectric devices 10 exhibiting a leakage current density of 10⁻⁶ A/cm² or less.

FIG. 6 is a graph showing experimental results extracted from those listed in Table 2. The horizontal axis indicates the ratio T/Ram of the thickness T of the dielectric layer 14 to the average value Ram of interface roughness, while the vertical axis represents the average leakage current density.

As shown in Table 2 and FIGS. 5 and 6, none of the 50 dielectric devices 10 exhibited a leakage current density of 10⁻⁶ A/cm² or less in each of the experimental examples in which T/Ram was 1.29 or less. The average leakage current density in these dielectric devices was 10⁻² to 10⁻³ A/cm². In experimental example 3 in which T/Ram was 1.33, by contrast, dielectric devices having a leakage current density of 10⁻⁶ A/cm² or less were obtained by a ratio of 6%. Though the average leakage current density was a relatively high value of 3.10×10⁻⁴ A/cm², the ratio of 6% seems to imply that, even when the dielectric layer 14 is thin, the leakage current density of the dielectric device 10 can sufficiently be suppressed if T/Ram is 1.3 or greater.

In experimental example 13 in which T/Ram was 3.29, the ratio of dielectric devices 10 exhibiting a leakage current density of 10⁻⁶ A/cm² or less was 16%, while the average leakage current density was 3.90×10⁻⁵ A/cm². In experimental example 14 in which T/Ram was 3.65, by contrast, the ratio of dielectric devices 10 exhibiting a leakage current density of 10⁻⁶ A/cm² or less drastically increased to 42%, while the average leakage current greatly decreased to 5.30×10⁻⁶ A/cm². Therefore, the leakage current density of the dielectric device 10 is assumed to decrease effectively when T/Ram is 3.6 or greater.

In experimental example 10 in which T/Ram was 4.60, the ratio of dielectric devices 10 exhibiting a leakage current density of 10⁻⁶ A/cm² or less was 44%, while the average leakage current density was 4.70×10⁻⁵ A/cm². In experimental example 15 in which T/Ram was 12.1, by contrast, the ratio of dielectric devices 10 exhibiting a leakage current density of 10⁻⁶ A/cm² or less reached 82%, while the average leakage current density remarkably decreased to 3.50×10⁻⁸ A/cm². Therefore, the leakage current density of the dielectric device 10 is assumed to decrease very effectively when T/Ram is 12 or greater.

In experimental example 5 in which T/Ram was 15.4, the average leakage current density was 5.10×10⁻⁷ A/cm², which was greater than that of experimental example 15 in which T/Ram was 12.1. However, the average leakage current density was 1/10 of that of experimental example 14 in which T/Ram was 3.65 or experimental example 10 in which T/Ram was 4.60, and thus was still very small. Also, in example 5, the ratio of dielectric devices 10 exhibiting a leakage current density of 10⁻⁶ A/cm² or less was 98%, and thus was very high.

In each of the experimental examples in which T/Ram was 28.6 or greater, the ratio of dielectric devices 10 exhibiting a leakage current density of 10⁻⁶ A/cm² or less was 100%, while the average leakage current density in each experimental example was 10⁻⁷ to 10⁻⁸ A/cm². Therefore, a very low leakage current density is assumed to be obtained more reliably when T/Ram is 28 or greater.

The above-mentioned experiment exhibits a tendency that the leakage current can be suppressed more as T/Ram is greater. When T is made too large or Ram is made too small in order to increase T/Ram, however, adverse effects may occur.

When the thickness T of the dielectric layer 14 is too large, for example, cracks are more likely to occur in the dielectric layer 14. These cracks increase the leakage current. From the viewpoint of preventing cracks, T≦1000 nm will be desirable. When the average value Ram of interface roughness is too small, the dielectric layer 14 is more likely to peel off from the metal foil 12 or the upper metal layer 16 is more likely to peel off from the dielectric layer 14. From the viewpoint of preventing peeling, Ram≧0.5 nm will be desirable. Comprehensively, T/Ram≦2000 will be desirable.

In the foregoing, the present invention is explained in detail with reference to its embodiment. However, the present invention is not limited to the above-mentioned embodiment. The present invention can be modified in various ways within the scope not deviating from the gist thereof.

Though the above-mentioned dielectric device 10 has a structure in which a dielectric layer is held between a pair of metal layers, the leakage current reducing effect by the numerical range of T/Ram mentioned above seems to be commonly obtainable in dielectric devices having a structure in which multiple electrodes are in contact with a dielectric layer. For example, setting T/Ram within the above-mentioned numerical range can also suppress the leakage current of the dielectric device when multiple metal layers are formed on one main face of a dielectric layer. Though the respective arithmetic mean roughnesses of the interfaces between the dielectric layer and the metal layers contribute to the magnitude of leakage current, Ram is the average value of the respective arithmetic mean roughnesses of the interfaces, whereby the above-mentioned numerical range of T/Ram can be employed commonly in dielectric devices having a structure in which multiple electrodes are in contact with a dielectric layer.

Though the dielectric layer 14 is constituted by BST in the above-mentioned experimental examples, the dielectric layer in the dielectric device in accordance with the present invention may be constructed by other materials as well. For example, the dielectric layer may be constituted by an oxide containing at least one element of Ba, Sr, Ca, Pb, Ti, Zr, and Hf. The dielectric layer may also be constituted by an oxide having a perovskite structure. The oxide having a perovskite structure has a composition represented by a general formula of ABO₃, examples of which include not only BST, but also BT, i.e., barium titanate BaTiO₃, strontium titanate SrTiO₃, (BaSr)(TiZr)O₃, and BaTiZrO₃.

As explained in the foregoing, the present invention can provide a dielectric device which can sufficiently suppress the leakage current even when the dielectric layer is thin. 

1. A dielectric device comprising a dielectric layer and first to nth metal layers (where n is an integer of 2 or greater) in contact with the dielectric layer; wherein at least one of the first to nth metal layers contains a base metal; wherein interfaces between the first to nth metal layers and the dielectric layer have respective arithmetic mean roughnesses of Ra₁ to Ra_(n) (nm); and wherein an average value Ram (nm) of the arithmetic mean roughnesses of Ra₁ to Ra_(n) (nm) and a thickness T (nm) of the dielectric layer satisfy T/Ram≧1.3.
 2. A dielectric device comprising a dielectric layer and first to nth metal layers (where n is an integer of 2 or greater) in contact with the dielectric layer; wherein at least one of the first to nth metal layers contains a base metal; wherein interfaces between the first to nth metal layers and the dielectric layer have respective arithmetic mean roughnesses of Ra₁ to Ra_(n) (nm); and wherein an average value Ram (nm) of the arithmetic mean roughnesses of Ra₁ to Ra_(n) (nm) and a thickness T (nm) of the dielectric layer satisfy T/Ram≧3.6.
 3. A dielectric device comprising a dielectric layer and first to nth metal layers (where n is an integer of 2 or greater) in contact with the dielectric layer; wherein at least one of the first to nth metal layers contains a base metal; wherein interfaces between the first to nth metal layers and the dielectric layer have respective arithmetic mean roughnesses of Ra₁ to Ra_(n) (nm); and wherein an average value Ram (nm) of the arithmetic mean roughnesses of Ra₁ to Ra_(n) (nm) and a thickness T (nm) of the dielectric layer satisfy T/Ram≧12.
 4. A dielectric device comprising a dielectric layer and first to nth metal layers (where n is an integer of 2 or greater) in contact with the dielectric layer; wherein at least one of the first to nth metal layers contains a base metal; wherein interfaces between the first to nth metal layers and the dielectric layer have respective arithmetic mean roughnesses of Ra₁ to Ra_(n) (nm); and wherein an average value Ram (nm) of the arithmetic mean roughnesses of Ra₁ to Ra_(n) (nm) and a thickness T (nm) of the dielectric layer satisfy T/Ram≧28.
 5. A dielectric device according to claim 1, wherein one of the first to nth metal layers is a metal foil supporting the dielectric layer.
 6. A dielectric device according to claim 2, wherein one of the first to nth metal layers is a metal foil supporting the dielectric layer.
 7. A dielectric device according to claim 3, wherein one of the first to nth metal layers is a metal foil supporting the dielectric layer.
 8. A dielectric device according to claim 4, wherein one of the first to nth metal layers is a metal foil supporting the dielectric layer.
 9. A dielectric device according to claim 1, wherein the dielectric layer is constituted by an oxide containing at least one element of Ba, Sr, Ca, Pb, Ti, Zr, and Hf.
 10. A dielectric device according to claim 2, wherein the dielectric layer is constituted by an oxide containing at least one element of Ba, Sr, Ca, Pb, Ti, Zr, and Hf.
 11. A dielectric device according to claim 3, wherein the dielectric layer is constituted by an oxide containing at least one element of Ba, Sr, Ca, Pb, Ti, Zr, and Hf.
 12. A dielectric device according to claim 4, wherein the dielectric layer is constituted by an oxide containing at least one element of Ba, Sr, Ca, Pb, Ti, Zr, and Hf.
 13. A dielectric device according to claim 1, wherein the dielectric layer is constituted by an oxide having a perovskite structure.
 14. A dielectric device according to claim 2, wherein the dielectric layer is constituted by an oxide having a perovskite structure.
 15. A dielectric device according to claim 3, wherein the dielectric layer is constituted by an oxide having a perovskite structure.
 16. A dielectric device according to claim 4, wherein the dielectric layer is constituted by an oxide having a perovskite structure. 